Product -
BSM10GD120DN2
Transistor
Technical specification:
Configuration: Full Bridge Max. VCEO collector-emitter voltage: 1200 V Collector-Emitter Saturation Voltage: 2.7 V DC Collector at 25 C: 15 A Door-emitter leakage current: 120 nA Dp - Power Dissipation: 80 W Package/Cover: EconoPack 2 Minimum working temperature: - 40 C Maximum working temperature: + 150 C Packaging: Tray Brand: Infineon Technologies Height: 17 mm Length: 107.5 mm Maximum gate-emitter voltage: 20 V Mounting Style: Chassis Mount Product Type: IGBT Modules Subcategory: IGBTs Technology: Yes Width: 45.5 mm Alias of the parts No.: SP000100367 BSM10GD120DN2BOSA1 Unit weight: 180 g
Product Additional Info
| Weight (kg) | 1 |
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