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Technical Specification (Datasheet, Manual, etc.):
Document 1Product -
FQA19N60
Power MOSFET
Technical specification:
Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ)
Product Additional Info
| Weight (kg) | 0.01 |
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